ICDD Awards - Fellowship Awards

Fellow
The designation of Fellow of the ICDD may be given by the ICDD Board of Directors to individuals who have given their time and talents beyond that normally associated with membership.

Selection process
Nominations are solicited from the ICDD membership and circulated to the Awards Committee for consideration and then presented to the ICDD Board of Directors. Candidates must serve a minimum term of two years in one of the following positions: Board Director, Technical Regional Co-chair, Committee Chair, Technical Subcommittee Chair, or leader in a noteworthy ICDD activity.

Submission Process:

  • Electronic: Names of candidates may be submitted to the Chairman of the ICDD Awards Committee by completing a Nomination Form.
  • Hardcopy: Alternatively, names of candidates may be submitted to the Chairman of the ICDD Awards Committee by mailing a letter of support describing the candidate's major accomplishments relative to the award, signed by the nominator and two others members.

In addition to the nomination form or letter of support, the candidate's curriculum vitae must be sent via e-mail to awards@icdd.com or by mail or fax, using the contact information below:

Chairman, ICDD Awards Committee
c/o The Corporate Secretary
International Centre for Diffraction Data
12 Campus Boulevard
Newtown Square Corporate Campus
Newtown Square, PA 19073-3273 U.S.A.
Fax: 610.325.9823
E-mail: info@icdd.com

Submission Deadline
Submissions must be made by 15 September for the next year's award.

Fellows

Ron Anderson

IBM Corporation, Hopewell Junction, NY, U.S.A.

Evgeny Antipov

Moscow State University, Russia

John Anzelmo

Anzelmo & Associates, Madison, WI, U.S.A.

Larry Arias

Bruker AXS, Inc., Madison, WI, U.S.A.

Davor Balzar

NIST, Boulder, CO, U.S.A.

Peter Bayliss

Australian Museum, Australia

Thomas N. Blanton

Eastman Kodak Co., Rochester, NY, U.S.A.

Allan Brown

Westfield, United Kingdom

Xiaolong Chen

Chinese Academy of Sciences, Beijing, People's Republic of China

James Cline

National Institute of Standards and Technology (NIST), U.S.A.

Cyrus E. Crowder

International Centre for Diffraction Data, Newtown Square, PA, U.S.A.

Jeffrey N. Dann

OSRAM SYLVANIA, Towanda, PA, U.S.A.

Jose Miguel Delgado

Universidad de Los Andes, Venezuela

Robert E. Dinnebier

Max-Planck-Institute for Solid State Research, Germany

Paden F. Dismore

Wilmington, DE, U.S.A.

 Alwyn Eades

Lehigh University, Bethlehem, PA U.S.A.

John Faber

Thornton, PA U.S.A.

Timothy G. Fawcett

International Centre for Diffraction Data, Newtown Square, PA, U.S.A.

Gerhard R. Fischer

Port Charlotte, FL, U.S.A.

C.M. Foris

DuPont Central Research & Development, Wilmington, DE, U.S.A.

Mary F. Garbauskas

G.E. Silicones, Waterford, NY, U.S.A.

Herbert Goebel

Siemens AG, Germany

Raymond P. Goehner

Sandia National Laboratories, Albuquerque, NM, U.S.A.

Gregory P Hamill

Teradyne, Inc., Boston, MA, U.S.A.

Richard L. Harlow

E.I. Dupont De Nemours & Co., Wilmington, DE, U.S.A.

George J. Havrilla

Los Alamos National Laboratory, Los Alamos, NM, U.S.A.

Helein D. Hitchcock

Mims, FL, U.S.A.

Nobuo Ishizawa

Tokyo Inst. of Technology, Nagatsuta, Midori, Japan

Howard Jones

Pratt & Whitney, East Hartford, CT, U.S.A.

James A. Kaduk

BP Amoco Chemicals, Naperville, IL, U.S.A.

Peter Lee

Argonne National Laboratory, Argonne, IL,U.S.A.

Shao-Fan Lin

Nankai University, People's Republic of China

Daniel Louër

Universite de Rennes I, France

Charlotte Lowe-Ma

Ford Motor Research Laboratories, Dearborn, MI, U.S.A.

Toshmichi Matsukura

Sanyo Information System Corp., Japan

Isaac P. Mayer

Hebrew University, Israel

Bill Mayo

H & M Analytical Services, Allentown, NJ, U.S.A.

Andrew M. McDonald

Laurentian University, Canada

Ronald C. Medrud

Napa, CA, U.S.A.

Julian Messick

Wallingford, PA, U.S.A.

Scott T. Misture

NYS College of Ceramics at Alfred University, Alfred, NY, U.S.A.

N. Sanjeeva Murthy

University of Vermont, Burlington, VT, U.S.A.

Monte C. Nichols

Livermore, CA, USA

Brian H. O'Connor

Curtain University of Technology, Australia

Andrew Payzant

Oak Ridge Natl. Lab., Oak Ridge, TN, U.S.A.

Jeffrey E. Post

Smithsonian Institution, Washington, DC, U.S.A.

Charles Prewitt

Carnegie Institute of Washington, Washington, DC, USA

Susan Quick

The Pennsylvania State University, University Park, PA, U.S.A.

David Rafaja

Freiberg University of Mining and Technology, Freiberg, Germany

David F. Rendle

The Forensic Science Service, United Kingdom

Andrew C. Roberts

Geological Survey of Canada, Canada

Mark Rodriguez

Sandia Natl. Labs, Albuquerque, NM, U.S.A.

Earl Ryba

Pennsylvania State Univ, University Park, PA, U.S.A.

Ann Sabina

Geological Survey of Canada, Canada

Paolo Scardi

Univ. di Trento, Mesiano, Italy

Walter N. Schreiner

IC Laboratories, Katonah, NY, U.S.A.

Carlo Segre

Illinois Inst. of Tech., Chicago, IL, U.S.A.

Joseph V. Smith

Chicago, IL, U.S.A.

Gregory A. Stephenson

Fishers, IN, U.S.A.

David J. Taylor

Consultant, United Kingdom

Harry G. Thielke

Greenville, NC, U.S.A.

Brian Toby

NIST, Gaithersburg, MD, U.S.A.

Hideo Toraya

Nagoya Inst. of Technology, Japan

Peter L. Wallace

Oro Valley, AZ, U.S.A.

Fred Wireko

Procter & Gamble Co., Cinncinnati, OH, U.S.A.

Winnie Wong-Ng

NIST, Gaithersburg, MD, U.S.A.

R.A. Young

Georgia Institute of Technology, Atlanta, GA, U.S.A.

Peter Zavalij

Univ. of Maryland, College Park, MD, U.S.A.

Leo Zwell

Swarthmore, PA, U.S.A.